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am29lv320mh/l data sheet retired product this product has been retired and is not ava ilable for designs. for new and current designs, s29gl032a supersedes am29lv320mh/l and is th e factory-recommended migration path. please refer to the s29gl032a datasheet for specifications and ordering information. availability of this document is retained for referenc e and historical purposes only. the following document contains information on spansion memory products. although the docu- ment is marked with the name of the company that originally developed the specification, spansion will continue to offer these products to existing customers. continuity of specifications there is no change to this data sheet as a result of offering the device as a spansion product. any changes that have been made are the result of no rmal data sheet improvement and are noted in the document revision summary, where supported. futu re routine revisions will occur when appro and changes will be noted in a revision summary. continuity of ordering part numbers spansion continues to support existing part number s beginning with ?am? and ?mbm?. to order these products, please use only the ordering part numbers listed in this document. for more information please contact your local sales office for additi onal information about spansion memory solutions. publication number 26517 revision b amendment 4 issue date january 31, 2007
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publication# 26517 rev: b amendment/ 4 issue date: january 31, 2007 data sheet am29lv320mh/l 32 megabit (2 m x 16-bit/4 m x 8-bit) mirrorbit ? 3.0 volt-only uniform sector fl ash memory with versatilei/o ? control distinctive characteristics architectural advantages single power supply operation ? 3 v for read, erase, and program operations versatilei/o ? control ? device generates data output voltages and tolerates data input voltages on the dq inputs/outputs as determined by the voltage on the v io pin; operates from 1.65 to 3.6 v manufactured on 0.23 m mirrorbit process technology secured silicon sector region ? 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random electronic serial number, accessible through a command sequence ? may be programmed and locked at the factory or by the customer flexible sector architecture ? sixty-four 32 kword/64-kbyte sectors compatibility with jedec standards ? provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection minimum 100,000 erase cycle guarantee per sector 20-year data retention at 125 c performance characteristics high performance ? 90 ns access time ? 25 ns page read times ? 0.5 s typical sector erase time ? 15 s typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word/byte updates ? 4-word/8-byte page read buffer ? 16-word/32-byte write buffer low power consumption (typical values at 3.0 v, 5 mhz) ? 13 ma typical active read current ? 50 ma typical erase/program current ? 1 a typical standby mode current package options ? 56-pin tsop ? 64-ball fortified bga software & hardware features software features ? program suspend & resume: read other sectors before programming operation is completed ? erase suspend & resume: read/program other sectors before an erase operation is completed ? data# polling & toggle bits provide status ? unlock bypass program command reduces overall multiple-word programming time ? cfi (common flash interface) compliant: allows host system to identify and ac commodate multiple flash devices hardware features ? sector group protection: hardware-level method of preventing write operations within a sector group ? temporary sector unprotect: v id -level method of changing code in locked sectors ? wp#/acc input: write protect input (wp#) protects first or last sector regardless of sector protection settings acc (high voltage) accelerates programming time for higher throughput during system production ? hardware reset input (reset#) resets device ? ready/busy# output (ry/by#) indicates program or erase cycle completion this product has been retired and is not available for designs. for new and current designs, s29gl032a supersedes am29lv320m h/ l and is the factory-recommended migration path. please refer to the s29gl032a datasheet for specifications and orderi ng information. availability of this document is retained for reference and historical purposes only.
2 am29lv320mh/l 26517b4 january 31, 2007 data sheet general description the am29lv320mh/l is a 32 mbit, 3.0 volt single power supply flash memory device organized as 2,097,152 words or 4,194,304 bytes. the device has an 8-bit/16-bit bus and can be programmed either in the host system or in standard eprom programmers. an access time of 90, 100, 110, or 120 ns is available. note that each access time has a specific operating voltage range (v cc ) and an i/o voltage range (v io ), as specified in the product selector guide and the order- ing information sections. the device is offered in a 56-pin tsop or 64-ball fortified bga package. each device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. each device requires only a single 3.0 volt power supply for both read and write functions. in addition to a v cc input, a high-voltage accelerated program (acc) feature provides shorter programming times through increased current on the wp#/acc input. this feature is intended to facilitate factory throughput dur- ing system production, but may also be used in the field if desired. the device is entirely command set compatible with the jedec single-power-supply flash standard . commands are written to the device using standard microprocessor write timing. write cycles also inter- nally latch addresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. device programming and erasure are initiated through command sequences. once a program or erase oper- ation has begun, the host system need only poll the dq7 (data# polling) or dq6 (toggle) status bits or monitor the ready/busy# (ry/by#) output to deter- mine whether the operation is complete. to facilitate programming, an unlock bypass mode reduces com- mand sequence overhead by requiring only two write cycles to program data instead of four. the versatilei/o? (v io ) control allows the host sys- tem to set the voltage levels that the device generates and tolerates on the ce# control input and dq i/os to the same voltage level that is asserted on the v io pin. refer to the ordering information section for valid v io options. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. this can be achieved in-system or via programming equipment. the erase suspend/erase resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. the program sus- pend/program resume feature enables the host sys- tem to pause a program operation in a given sector to read any other sector and then complete the program operation. the hardware reset# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the host system to read boot-up firmware from the flash memory device. the device reduces power consumption in the standby mode when it detects specific voltage levels on ce# and reset#, or when addresses have been stable for a specified period of time. the write protect (wp#) feature protects the first or last sector by asserting a logic low on the wp#/acc pin. the protected sector will still be protected even during accelerated programming. the secured silicon sector provides a 128-word/256-byte area for code or data that can be permanently protected. once this sector is protected, no further changes within the sector can occur. amd mirrorbit flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effec- tiveness. the device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. the data is programmed using hot electron injection.
january 31, 2007 26517b4 am29lv320mh/l 3 data sheet mirrorbit 32 mbit device family related documents to download related documents, click on the following links or go to www.amd.com flash memory prod- uct information mirrorbit flash information te c h - nical documentation. mirrorbit? flash memory write buffer programming and page buffer read implementing a common layout for amd mirrorbit and intel strataflash memory devices migrating from single-byte to three-byte device ids amd mirrorbit? white paper device bus sector architecture packages v io ry/by# wp#, acc wp# protection lv033mu x8 uniform (64 kbyte) 40-pin tsop (std. & rev. pinout), 48-ball fbga yes yes acc only no wp# lv320mt/b x8/x16 boot (8 x 8 kbyte at top & bottom) 48-pin tsop, 48-ball fine-pitch bga, 64-ball fortified bga no yes wp#/acc pin 2 x 8 kbyte top or bottom lv320mh/l x8/x16 uniform (64 kbyte) 56-pin tsop (std. & rev. pinout), 64 fortified bga yes yes wp#/acc pin 1 x 64 kbyte high or low
4 am29lv320mh/l 26517b4 january 31, 2007 data sheet table of contents product selector guide . . . . . . . . . . . . . . . . . . . . . 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 connection diagrams . . . . . . . . . . . . . . . . . . . . . . 6 logic symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ordering information . . . . . . . . . . . . . . . . . . . . . . . 9 device bus operations . . . . . . . . . . . . . . . . . . . . 10 table 1. device bus operations ..................................................... 10 versatileio ? (v io ) control ..................................................... 10 requirements for reading array data ................................... 11 page mode read ............................................................................11 writing commands/command sequences ............................ 11 write buffer .....................................................................................11 accelerated program operation ......................................................11 autoselect functions .......................................................................11 automatic sleep mode ........................................................... 12 reset#: hardware reset pin ............................................... 12 output disable mode .............................................................. 12 table 2. sector address table........................................................ 13 table 3. autoselect codes, (high voltage method) ....................... 15 sector group protection and unprotection ............................. 16 table 4. sector group protection/unprotection address table ..... 16 temporary sector group unprotect ....................................... 17 figure 1. temporary sector group unprotect operation ................17 figure 2. in-system sector group protect/unprotect algorithms ...18 secured silicon sector flash memory region ....................... 19 table 5. secured silicon sector contents ...................................... 19 figure 3. secured silicon sector protect verify ..............................20 hardware data protection ...................................................... 20 low vcc write inhibit .....................................................................20 write pulse ?glitch? protection ........................................................20 logical inhibit ..................................................................................20 power-up write inhibit ....................................................................20 common flash memory interface (cfi) . . . . . . . 20 table 6. cfi query identification string ..........................................21 table 7. system interface string..................................................... 21 table 8. device geometry definition ..............................................22 table 9. primary vendor-specific extended query ........................23 command definitions . . . . . . . . . . . . . . . . . . . . . 24 reading array data ................................................................ 24 reset command ..................................................................... 24 autoselect command sequence ............................................ 24 enter secured silicon sector/exit secured silicon sector command sequence .............................................................. 25 word/byte program command sequence ............................. 25 unlock bypass command sequence ..............................................25 write buffer programming ...............................................................25 accelerated program ......................................................................26 figure 4. write buffer programming operation ...............................27 figure 5. program operation ..........................................................28 program suspend/program resume command sequence ... 28 figure 6. program suspend/program resume ...............................29 chip erase command sequence ........................................... 29 sector erase command sequence ........................................ 29 erase suspend/erase resume commands ........................... 30 figure 7. erase operation .............................................................. 30 table 10. command definitions (x16 mode, byte# = v ih ) ........... 31 table 11. command definitions (x8 mode, byte# = v il ).............. 32 write operation status . . . . . . . . . . . . . . . . . . . . . 33 dq7: data# polling ................................................................. 33 figure 8. data# polling algorithm .................................................. 33 dq6: toggle bit i .................................................................... 34 figure 9. toggle bit algorithm ........................................................ 35 dq2: toggle bit ii ................................................................... 35 reading toggle bits dq6/dq2 ............................................... 35 dq5: exceeded timing limits ................................................ 36 dq3: sector erase timer ....................................................... 36 dq1: write-to-buffer abort ..................................................... 36 table 12. write operation status................................................... 36 figure 10. maximum negative overshoot waveform ................... 37 figure 11. maximum positive overshoot waveform ..................... 37 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . 37 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38 test conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 39 figure 12. test setup .................................................................... 39 table 13. test specifications ......................................................... 39 key to switching waveforms. . . . . . . . . . . . . . . . 39 figure 13. input waveforms and measurement levels ...................................................................... 39 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40 read-only operations ........................................................... 40 figure 14. read operation timing ................................................. 40 figure 15. page read timings ...................................................... 41 hardware reset (reset#) .................................................... 42 figure 16. reset timings ............................................................... 42 erase and program operations .............................................. 43 figure 17. program operation timings .......................................... 44 figure 18. accelerated program timing diagram .......................... 44 figure 19. chip/sector erase operation timings .......................... 45 figure 20. data# polling timings (during embedded algorithms) . 46 figure 21. toggle bit timings (during embedded algorithms) ...... 47 figure 22. dq2 vs. dq6 ................................................................. 47 temporary sector unprotect .................................................. 48 figure 23. temporary sector group unprotect timing diagram ... 48 figure 24. sector group protect and unprotect timing diagram .. 49 alternate ce# controlled erase and program operations ..... 50 figure 25. alternate ce# controlled write (erase/program) operation timings .......................................................................... 51 erase and programming performance. . . . . . . . 52 latchup characteristics . . . . . . . . . . . . . . . . . . . . 52 tsop pin and bga package capacitance . . . . . 53 data retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 physical dimensions . . . . . . . . . . . . . . . . . . . . . . 54 ts056/tsr056?56-pin standard and reverse pinout thin small outline package (tsop) .............................................. 54 laa064?64-ball fortified ball grid array ( f bga) 13 x 11 mm package .................................................................................. 55 revision summary . . . . . . . . . . . . . . . . . . . . . . . . 56
january 31, 2007 26517b4 am29lv320mh/l 5 data sheet product selector guide note: 1. see ac characteristics for full specifications. 2. for the am29lv320mh/l device, the last numeric digit in the speed option (e.g. 90 r, 101 , 112 , 120 ) is used for internal purposes only. please use opns as listed when placing orders. block diagram part number am29lv320mh/l speed option v cc = 3.0?3.6 v 90r (v io = 3.0?3.6 v) 101r (v io = 2.7?3.6 v) 112r (v io = 1.65?3.6 v) 120r (v io = 1.65?3.6 v) v cc = 2.7?3.6 v 101 (v io = 2.7?3.6 v) 112 (v io = 1.65?3.6 v) 120 (v io = 1.65?3.6 v) max. access time (ns) 90 100 110 120 max. ce# access time (ns) 90 100 110 120 max. page access time (t pac c )25 30 30 40 30 40 max. oe# access time (ns) 25 30 30 40 30 40 input/output buffers x-decoder y-decoder chip enable output enable logic erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# wp#/acc byte# ce# oe# stb stb dq0 ? dq15 (a-1) sector switches ry/by# reset# data latch y-gating cell matrix address latch a20?a0 v io
6 am29lv320mh/l 26517b4 january 31, 2007 data sheet connection diagrams 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 nc nc 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 nc nc 23 24 25 26 27 28 nc nc 34 33 32 31 30 29 nc v io a15 a18 a14 a13 a12 a11 a10 a9 a8 a19 a20 we# reset# nc wp#/acc ry/by# a1 a17 a7 a6 a5 a4 a3 a2 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 nc nc a15 a14 a13 a12 a11 a10 a9 a8 a19 a20 we# reset# nc wp#/acc ry/by# a18 a17 a7 a6 a5 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 nc nc a16 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v cc dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 23 24 25 26 27 28 a4 a3 a2 a1 nc nc 34 33 32 31 30 29 oe# v ss ce# a0 nc v io 56-pin standard tsop 56-pin reverse tsop
january 31, 2007 26517b4 am29lv320mh/l 7 data sheet connection diagrams special package ha ndling instructions special handling is required for flash memory products in molded packages (tsop, bga, ssop, pdip, plcc). the package and/or data integrity may be compromised if the package body is exposed to temperatures above 150 c for prolonged periods of time. b3 c3 d3 e3 f3 g3 h3 b4 c4 d4 e4 f4 g4 h4 b5 c5 d5 e5 f5 g5 h5 b6 c6 d6 e6 f6 g6 h6 b7 c7 d7 e7 f7 g7 h7 b8 c8 d8 e8 f8 g8 h8 nc nc nc v ss v io nc nc v ss dq15/a-1 byte# a16 a15 a14 a12 dq6 dq13 dq14 dq7 a11 a10 a8 dq4 v cc dq12 dq5 a19 nc reset# dq3 dq11 dq10 dq2 a20 a18 wp#/acc dq1 dq9 dq8 dq0 a5 a6 a17 a3 a4 a5 a6 a7 a8 nc a13 a9 we# ry/by# a7 b2 c2 d2 e2 f2 g2 h2 v ss oe# ce# a0 a1 a2 a4 a2 a3 b1 c1 d1 e1 f1 g1 h1 nc nc v io nc nc nc nc a1 nc 64-ball fortified bga top view, balls facing down
8 am29lv320mh/l 26517b4 january 31, 2007 data sheet pin description a20?a0 = 21 address inputs dq14?dq0 = 15 data inputs/outputs dq15/a-1 = dq15 (data input/output, word mode), a-1 (lsb address input, byte mode) ce# = chip enable input oe# = output enable input we# = write enable input wp#/acc = hardware write protect input/pro- gramming acceleration input reset# = hardware reset pin input ry/by# = ready/busy output byte# = selects 8-bit or 16-bit mode v cc = 3.0 volt-only single power supply (see product selector guide for speed options and voltage supply tolerances) v io = output buffer power v ss = device ground nc = pin not connected internally logic symbol 21 16 or 8 dq15?dq0 (a-1) a20?a0 ce# oe# we# reset# ry/by# wp#/acc v io byte#
january 31, 2007 26517b4 am29lv320mh/l 9 data sheet ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configur ations planned to be supported in vol- ume for this device. consult the local amd sales office to confirm availability of s pecific valid combinations and to check on newly re- leased combinations. note: for the am29lv320mh/l device, the last numeric digit in the speed option (e.g. 90 r, 101 , 112 , 120 ) is used for internal purposes only. please use opns as listed when placing orders. am29lv320m h 120r pc i temperature range i = industrial (?40 c to +85 c) f = industrial (?40 c to +85 c) with pb-free packages package type e = 56-pin thin small outline package (tsop) standard pinout (ts 056) f = 56-pin thin small outline package (tsop) reverse pinout (tsr056) pc = 64-ball fortified ball grid array 1.0 mm pitch, 13 x 11 mm package (laa064) speed option see product selector guide and valid combinations sector architecture and wp# protection (wp# = v il ) h = uniform sector device, highest address sector protected l = uniform sector device, lowest address sector protected device number/description am29lv320m 32 megabit (2 m x 16-bit/4 m x 8-bit) mirrorbit ? uniform sector flash memory with versatileio ? control, 3.0 volt-only read, program, and erase valid combinations for tsop package speed (ns) v io range v cc range am29lv320mh90r, am29lv320ml90r ei, fi, ef 90 3.0?3.6 v 3.0?3.6 v am29lv320mh101, am29lv320ml101 100 2.7?3.6 v 2.7?3.6 v am29lv320mh112, am29lv320ml112 110 1.65?3.6 v am29lv320mh120, am29lv320ml120 120 1.65?3.6 v am29lv320mh101r, am29lv320ml101r 100 2.7?3.6 v 3.0?3.6 v am29lv320mh112r, am29lv320ml112r 110 1.65?3.6 v am29lv320mh120r, am29lv320ml120r 120 1.65?3.6 v valid combinations for fortified bga package speed (ns) v io range v cc range order number package marking am29lv320mh90r, am29lv320ml90r pci, pcf l320mh90n, l320ml90n i, f 90 3.0? 3.6 v 3.0? 3.6 v am29lv320mh101, am29lv320ml101 l320mh01p, l320ml01p 100 2.7? 3.6 v 2.7? 3.6 v am29lv320mh112, am29lv320ml112 l320mh11p, l320ml11p 110 1.65? 3.6 v am29lv320mh120, am29lv320ml120 l320mh12p, l320ml12p 120 1.65? 3.6 v am29lv320mh101r, am29lv320ml101r l320mh01n, l320ml01n 100 2.7? 3.6 v 3.0? 3.6 v am29lv320mh112r, am29lv320ml112r l320mh11n, l320ml11n 110 1.65? 3.6 v am29lv320mh120r, am29lv320ml120r l320mh12n, l320ml12n 120 1.65? 3.6 v
10 am29lv320mh/l 26517b4 january 31, 2007 data sheet device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory loca- tion. the register is a latch used to store the com- mands, along with the address and data information needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the function of the device. ta bl e 1 lists the device bus operations, the in- puts and control levels they require, and the resulting output. the following subsections describe each of these operations in further detail. table 1. device bus operations legend: l = logic low = v il , h = logic high = v ih , v id = 11.5?12.5 v, v hh = 11.5?12.5 v, x = don?t care, sa = sector address, a in = address in, d in = data in, d out = data out notes: 1. addresses are a20:a0 in word mode; a20:a-1 in byte mode. sector addresses are a20:a15 in both modes. 2. the sector protect and sector unprotect functions ma y also be implemented via programming equipment. see the ?sector group protection and unprotection? section. 3. if wp# = v il , the first or last sector re mains protected. if wp# = v ih , the first or last sector will be protected or unprotected as determined by the method described in ?sector group protection and unprotection? . all sectors are unprotected when shipped from the factory (the secured silicon sector may be factory protected depending on version ordered.) 4. d in or d out as required by command sequence, data polling, or sector protect algorithm (see figure 2). word/byte configuration the byte# pin controls whether the device data i/o pins operate in the byte or word configuration. if the byte# pin is set at logic ?1?, the device is in word con- figuration, dq0?dq15 are active and controlled by ce# and oe#. if the byte# pin is set at logi c ?0?, the device is in byte configuration, and only data i/o pins dq0?dq7 are active and controlled by ce# and oe#. the data i/o pins dq8?dq14 are tri-stated, and the dq15 pin is used as an input for the lsb (a-1) address function. versatileio ? (v io ) control the versatileio? (v io ) control allows the host system to set the voltage levels that the device generates and tolerates on ce# and dq i/os to the same voltage level that is asserted on v io . see ?ordering informa- tion? on page 9 for v io options on this device. operation ce# oe# we# reset# wp# acc addresses (note 2) dq0? dq7 dq8?dq15 byte# = v ih byte# = v il read l l h h xx a in d out d out dq8?dq14 = high-z, dq15 = a-1 write (program/erase) l h l h (note 3) x a in (note 4) (note 4) accelerated program l h l h (note 3) v hh a in (note 4) (note 4) standby v cc 0.3 v xx v cc 0.3 v xh x high-z high-z high-z output disable l h h h xx x high-z high-z high-z reset x x x l xx x high-z high-z high-z sector group protect (note 2) lhl v id hx sa, a6 =l, a3=l, a2=l, a1=h, a0=l (note 4) x x sector group unprotect (note 2) lhl v id hx sa, a6=h, a3=l, a2=l, a1=h, a0=l (note 4) x x temporary sector group unprotect xxx v id hx a in (note 4) (note 4) high-z
january 31, 2007 26517b4 am29lv320mh/l 11 data sheet for example, a v i/o of 1.65?3.6 volts allows for i/o at the 1.8 or 3 volt levels, driving and receiving signals to and from other 1.8 or 3 v devices on the same data bus. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output con- trol and gates array data to the output pins. we# should remain at v ih . the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no com- mand is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see ?reading array data? for more information. refer to the ac read-only operations table for timing speci- fications and to figure 13 for the timing diagram. refer to the dc characteristics table for the active current specification on reading array data. page mode read the device is capable of fast page mode read and is compatible with the page mode mask rom read oper- ation. this mode provides faster read access speed for random locations within a page. the page size of the device is 4 words/8 bytes. the appropriate page is selected by the higher address bits a(max)?a2. ad- dress bits a1?a0 in word mode (a1?a-1 in byte mode) determine the specific word within a page. this is an asynchronous operation; the microprocessor supplies the specific wo rd location. the random or initial page access is equal to t acc or t ce and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to t pac c . when ce# is deasserted and reasserted for a subsequent access, the access time is t acc or t ce . fast page mode ac- cesses are obtained by keeping the ?read-page ad- dresses? constant and changing the ?intra-read page? addresses. writing commands/command sequences to write a command or command sequence (which in- cludes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . the device features an unlock bypass mode to facili- tate faster programming. once the device enters the unlock bypass mode, only two write cycles are re- quired to program a word or byte, instead of four. the ?word/byte program command sequence? section has details on programming data to the device using both standard and unlock bypass command se- quences. an erase operation can erase one sector, multiple sec- tors, or the entire device. ta bl e 2 indicates the address space that each sector occupies. refer to the dc characteristics table for the active current specification for the write mode. the ac char- acteristics section contains timing specification tables and timing diagrams for write operations. write buffer write buffer programming allows the system to write a maximum of 16 words/32 bytes in one programming operation. this results in faster effective programming time than the standard programming algorithms. see ?write buffer? for more information. accelerated program operation the device offers accelerated program operations through the acc function. this is one of two functions provided by the wp#/acc pin. this function is prima- rily intended to allow faster manufacturing throughput at the factory. if the system asserts v hh on this pin, the device auto- matically enters the aforementioned unlock bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. the system would use a two-cycle program command sequence as required by the unlock bypass mode. removing v hh from the wp#/acc pin returns the device to nor- mal operation. note that the wp#/acc pin must not be at v hh for operations other than accelerated program- ming, or device damage may result. in addition, no ex- ternal pullup is necessary since the wp#/acc pin has internal pullup to v cc. autoselect functions if the system writes the autoselect command se- quence, the device enters the autoselect mode. the system can then read autose lect codes from the inter- nal register (which is separate from the memory array) on dq7?dq0. standard read cycle timings apply in this mode. refer to the autoselect mode and autose- lect command sequence sections for more informa- tion. standby mode when the system is not read ing or writing to the de- vice, it can place the device in the standby mode. in this mode, current consumption is greatly reduced,
12 am29lv320mh/l 26517b4 january 31, 2007 data sheet and the outputs are placed in the high impedance state, independent of the oe# input. the device enters the cmos standby mode when the ce# and reset# pins are both held at v io 0.3 v. (note that this is a more restricted voltage range than v ih .) if ce# and reset# are held at v ih , but not within v io 0.3 v, the device will be in the standby mode, but the standby current will be greater. the device re- quires standard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. if the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. refer to the dc characteristics table for the standby current specification. automatic sleep mode the automatic sleep mode minimizes flash device en- ergy consumption. the device automatically enables this mode when addresses remain stable for t acc + 30 ns. the automatic sleep mode is independent of the ce#, we#, and oe# control signals. standard ad- dress access timings provide new data when ad- dresses are changed. while in sleep mode, output data is latched and always available to the system. refer to the dc characteristics table for the automatic sleep mode current specification. reset#: hardware reset pin the reset# pin provides a hardware method of re- setting the device to reading array data. when the re- set# pin is driven low for at least a period of t rp , the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the reset# pulse. the device also resets the internal state ma- chine to reading array data. the operation that was in- terrupted should be reinitiated once the device is ready to accept another command sequence, to en- sure data integrity. current is reduced for the duration of the reset# pulse. when reset# is held at v ss 0.3 v, the device draws cmos standby current (i cc4 ). if reset# is held at v il but not within v ss 0.3 v, the standby current will be greater. the reset# pin may be tied to the system reset cir- cuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firm- ware from the flash memory. refer to the ac characteristics tables for reset# pa- rameters and to figure 16 for the timing diagram. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high impedance state.
january 31, 2007 26517b4 am29lv320mh/l 13 data sheet table 2. sector address table sector a20-a15 sector size (kbytes/kwords) 8-bit address range (in hexadecimal) 16-bit address range (in hexadecimal) sa0 0 0 0 0 0 0 64/32 000000?00ffff 000000?007fff sa1 0 0 0 0 0 1 64/32 010000?01ffff 008000?00ffff sa2 0 0 0 0 1 0 64/32 020000?02ffff 010000?017fff sa3 0 0 0 0 1 1 64/32 030000?03ffff 018000?01ffff sa4 0 0 0 1 0 0 64/32 040000?04ffff 020000?027fff sa5 0 0 0 1 0 1 64/32 050000?05ffff 028000?02ffff sa6 0 0 0 1 1 0 64/32 060000?06ffff 030000?037fff sa7 0 0 0 1 1 1 64/32 070000?07ffff 038000?03ffff sa8 0 0 1 0 0 0 64/32 080000?08ffff 040000?047fff sa9 0 0 1 0 0 1 64/32 090000?09ffff 048000?04ffff sa10 0 0 1 0 1 0 64/32 0a0000?0affff 050000?057fff sa11 0 0 1 0 1 1 64/32 0b0000?0bffff 058000?05ffff sa12 0 0 1 1 0 0 64/32 0c0000?0cffff 060000?067fff sa13 0 0 1 1 0 1 64/32 0d0000?0dffff 068000?06ffff sa14 0 0 1 1 1 0 64/32 0e0000?0effff 070000?077fff sa15 0 0 1 1 1 1 64/32 0f0000?0fffff 078000?07ffff sa16 0 1 0 0 0 0 64/32 100000?10ffff 080000?087fff sa17 0 1 0 0 0 1 64/32 110000?11ffff 088000?08ffff sa18 0 1 0 0 1 0 64/32 120000?12ffff 090000?097fff sa19 0 1 0 0 1 1 64/32 130000?13ffff 098000?09ffff sa20 0 1 0 1 0 0 64/32 140000?14ffff 0a0000?0a7fff sa21 0 1 0 1 0 1 64/32 150000?15ffff 0a8000?0affff sa22 0 1 0 1 1 0 64/32 160000?16ffff 0b0000?0b7fff sa23 0 1 0 1 1 1 64/32 170000?17ffff 0b8000?0bffff sa24 0 1 1 0 0 0 64/32 180000?18ffff 0c0000?0c7fff sa25 0 1 1 0 0 1 64/32 190000?19ffff 0c8000?0cffff sa26 0 1 1 0 1 0 64/32 1a0000?1affff 0d0000?0d7fff sa27 0 1 1 0 1 1 64/32 1b0000?1bffff 0d8000?0dffff sa28 0 1 1 1 0 0 64/32 1c0000?1cffff 0e0000?0e7fff sa29 0 1 1 1 0 1 64/32 1d0000?1dffff 0e8000?0effff sa30 0 1 1 1 1 0 64/32 1e0000?1effff 0f0000?0f7fff sa31 0 1 1 1 1 1 64/32 1f0000?1fffff 0f8000?0fffff sa32 1 0 0 0 0 0 64/32 200000?20ffff 100000?107fff sa33 1 0 0 0 0 1 64/32 210000?21ffff 108000?10ffff sa34 1 0 0 0 1 0 64/32 220000?22ffff 110000?117fff sa35 1 0 0 0 1 1 64/32 230000?23ffff 118000?11ffff sa36 1 0 0 1 0 0 64/32 240000?24ffff 120000?127fff sa37 1 0 0 1 0 1 64/32 250000?25ffff 128000?12ffff sa38 1 0 0 1 1 0 64/32 260000?26ffff 130000?137fff sa39 1 0 0 1 1 1 64/32 270000?27ffff 138000?13ffff sa40 1 0 1 0 0 0 64/32 280000?28ffff 140000?147fff sa41 1 0 1 0 0 1 64/32 290000?29ffff 148000?14ffff sa42 1 0 1 0 1 0 64/32 2a0000?2affff 150000?157fff sa43 1 0 1 0 1 1 64/32 2b0000?2bffff 158000?15ffff
14 am29lv320mh/l 26517b4 january 31, 2007 data sheet notes: the address range is a20:a-1 in byte mode (byte# = v il ) or a20:a0 in word mode (byte# = v ih ). sa44 1 0 1 1 0 0 64/32 2c0000?2cffff 160000?167fff sa45 1 0 1 1 0 1 64/32 2d0000?2dffff 168000?16ffff sa46 1 0 1 1 1 0 64/32 2e0000?2effff 170000?177fff sa47 1 0 1 1 1 1 64/32 2f0000?2fffff 178000?17ffff sa48 1 1 0 0 0 0 64/32 300000?30ffff 180000?187fff sa49 1 1 0 0 0 1 64/32 310000?31ffff 188000?18ffff sa50 1 1 0 0 1 0 64/32 320000?32ffff 190000?197fff sa51 1 1 0 0 1 1 64/32 330000?33ffff 198000?19ffff sa52 1 1 0 1 0 0 64/32 340000?34ffff 1a0000?1a7fff sa53 1 1 0 1 0 1 64/32 350000?35ffff 1a8000?1affff sa54 1 1 0 1 1 0 64/32 360000?36ffff 1b0000?1b7fff sa55 1 1 0 1 1 1 64/32 370000?37ffff 1b8000?1bffff sa56 1 1 1 0 0 0 64/32 380000?38ffff 1c0000?1c7fff sa57 1 1 1 0 0 1 64/32 390000?39ffff 1c8000?1cffff sa58 1 1 1 0 1 0 64/32 3a0000?3affff 1d0000?1d7fff sa59 1 1 1 0 1 1 64/32 3b0000?3bffff 1d8000?1dffff sa60 1 1 1 1 0 0 64/32 3c0000?3cffff 1e0000?1e7fff sa61 1 1 1 1 0 1 64/32 3d0000?3dffff 1e8000?1effff sa62 1 1 1 1 1 0 64/32 3e0000?3effff 1f0000?1f7fff sa63 1 1 1 1 1 1 64/32 3f0000?3fffff 1f8000?1fffff table 2. sector address table (continued) sector a20-a15 sector size (kbytes/kwords) 8-bit address range (in hexadecimal) 16-bit address range (in hexadecimal)
january 31, 2007 26517b4 am29lv320mh/l 15 data sheet autoselect mode the autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on dq7?dq0. this mode is primarily intended for programming equip- ment to automatically match a device to be pro- grammed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-syste m through the command register. when using programming equipment, the autoselect mode requires v id on address pin a9. address pins a6, a3, a2, a1, and a0 must be as shown in ta b l e 3 . in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see ta b l e 2 ). ta b l e 3 shows the remain- ing address bits that are don?t care. when all neces- sary bits have been set as required, the programming equipment may then read the corresponding identifier code on dq7?dq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in tables 10 and 11 . this method does not require v id . refer to the autoselect command sequence section for more information. table 3. autoselect codes, (high voltage method) legend: l = logic low = v il , h = logic high = v ih , sa = sector address, x = don?t care. description ce# oe# we# a20 to a15 a14 to a10 a9 a8 to a7 a6 a5 to a4 a3 to a2 a1 a0 dq8 to dq15 dq7 to dq0 byte# = v ih byte# = v il manufacturer id : amd l l h x x v id x l x l l l 00 x 01h device id cycle 1 llhxx v id xl x llh 22 x 7eh cycle 2 h h l 22 x 1dh cycle 3 h h h 22 x 00h sector protection verification llhsax v id xl x l h l x x 01h (protected), 00h (unprotected) secured silicon sector indicator bit (dq7), wp# protects highest address sector llhxx v id xl x l h h x x 98h (factory locked), 18h (not factory locked) secured silicon sector indicator bit (dq7), wp# protects lowest address sector llhxx v id xl x l h h x x 88h (factory locked), 08h (not factory locked)
16 am29lv320mh/l 26517b4 january 31, 2007 data sheet sector group protection and unprotection the hardware sector group protection feature disables both program and erase operations in any sector group. in this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see ta bl e 4 ). the hardware sector group unprotection feature re-enables both program and erase operations in previously protected sector groups. sector group protection/unprotection can be implemented via two methods. sector protection/unprotection requires v id on the re- set# pin only, and can be implemented either in-sys- tem or via programming equipment. figure 2 shows the algorithms and figure 24 shows the timing dia- gram. this method uses standard microprocessor bus cycle timing. for sector group unprotect, all unpro- tected sector groups must first be protected prior to the first sector group unprotect write cycle. the device is shipped with all sector groups unpro- tected. amd offers the option of programming and pro- tecting sector groups at its factory prior to shipping the device through amd?s expressflash? service. con- tact an amd representative for details. it is possible to determine whether a sector group is protected or unprotected. see the autoselect mode section for details. table 4. sector group protection/unprotection address table sector group a20?a15 sa0 000000 sa1 000001 sa2 000010 sa3 000011 sa4?sa7 0001xx sa8?sa11 0010xx sa12?sa15 0011xx sa16?sa19 0100xx sa20?sa23 0101xx sa24?sa27 0110xx sa28?sa31 0111xx sa32?sa35 1000xx sa36?sa39 1001xx sa40?sa43 1010xx sa44?sa47 1011xx sa48?sa51 1100xx sa52?sa55 1101xx sa56?sa59 1110xx sa60 111100 sa61 111101 sa62 111110 sa63 111111
january 31, 2007 26517b4 am29lv320mh/l 17 data sheet write protect (wp#) the write protect function provides a hardware method of protecting the first or last sector without using v id . write protect is one of two functions pro- vided by the wp#/acc input. if the system asserts v il on the wp#/acc pin, the de- vice disables program and erase functions in the first or last sector independently of whether those sectors were protected or unprotected using the method de- scribed in ?sector group protection and unprotection? . note that if wp#/acc is at v il when the device is in the standby mode, the maximum input load current is increased. see the table in ?dc characteristics? . if the system asserts v ih on the wp#/acc pin, the de- vice reverts to whether the fi rst or last sector was pre- viously set to be protected or unprotected using the method described in ?sector group protection and unprotection? . note: no external pullup is necessary since the wp#/acc pin has internal pullup to v cc . temporary sector group unprotect ( note: in this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see ta b l e 4 ). this feature allows temporary unprotection of previ- ously protected sector group s to change data in-sys- tem. the sector group unprotect mode is activated by setting the reset# pin to v id . during this mode, for- merly protected sector groups can be programmed or erased by selecting the sector group addresses. once v id is removed from the reset# pin, all the previously protected sector groups are protected again. figure 1 shows the algorithm, and figure 23 shows the timing diagrams, for this feature. figure 1. temporary sector group unprotect operation start perform erase or program operations reset# = v ih temporary sector group unprotect completed (note 2) reset# = v id (note 1) notes: 1. all protected sector groups unprotected (if wp# = v il , the first or last sector will remain protected). 2. all previously protected sector groups are protected once again.
18 am29lv320mh/l 26517b4 january 31, 2007 data sheet figure 2. in-system sector group protect/unprotect algorithms sector group protect: write 60h to sector group address with a6?a0 = 0xx0010 set up sector group address wait 150 s verify sector group protect: write 40h to sector group address with a6?a0 = 0xx0010 read from sector group address with a6?a0 = 0xx0010 start plscnt = 1 reset# = v id wait 1 s first write cycle = 60h? data = 01h? remove v id from reset# write reset command sector group protect complete yes yes no plscnt = 25? yes device failed increment plscnt temporary sector group unprotect mode no sector group unprotect: write 60h to sector group address with a6?a0 = 1xx0010 set up first sector group address wait 15 ms verify sector group unprotect: write 40h to sector group address with a6?a0 = 1xx0010 read from sector group address with a6?a0 = 1xx0010 start plscnt = 1 reset# = v id wait 1 s data = 00h? last sector group verified? remove v id from reset# write reset command sector group unprotect complete yes no plscnt = 1000? yes device failed increment plscnt temporary sector group unprotect mode no all sector groups protected? yes protect all sector groups: the indicated portion of the sector group protect algorithm must be performed for all unprotected sector groups prior to issuing the first sector group unprotect address set up next sector group address no yes no yes no no yes no sector group protect algorithm sector group unprotect algorithm first write cycle = 60h? protect another sector group? reset plscnt = 1
january 31, 2007 26517b4 am29lv320mh/l 19 data sheet secured silicon sector flash memory region the secured silicon sector feature provides a flash memory region that enables permanent part identifica- tion through an electronic serial number (esn). the secured silicon sector is 256 bytes in length, and uses a secured silicon sector indicator bit (dq7) to indicate whether or not the secured silicon sector is locked when shipped from the factory. this bit is per- manently set at the factory and cannot be changed, which prevents cloning of a factory locked part. this ensures the security of the esn once the product is shipped to the field. amd offers the device with the secured silicon sector either customer lockable (standard shipping option) or factory locked (contact an amd sales representative for ordering information). the customer-lockable ver- sion is shipped with the se cured silicon sector unpro- tected, allowing customers to program the sector after receiving the device. the customer-lockable version also has the secured silicon sector indicator bit per- manently set to a ?0.? the factory-locked version is al- ways protected when shipped from the factory, and has the secured silicon sector indicator bit perma- nently set to a ?1.? thus, the secured silicon sector in- dicator bit prevents customer-lockable devices from being used to replace devices that are factory locked. note that the acc function and unlock bypass modes are not available when the secured silicon sector is enabled. the secured silicon sector address space in this de- vice is allocated as follows: the system accesses the secured silicon sector through a command sequence (see ?enter secured silicon sector/exit secured silicon sector command sequence? ). after the system has written the enter secured silicon sector command sequence, it may read the secured silicon sector by using the addresses normally occupied by the first sector (sa0). this mode of operation continues until the system is- sues the exit secured si licon sector command se- quence, or until power is removed from the device. on power-up, or following a hardware reset, the device re- verts to sending comma nds to sector sa0. customer lockable: secured silicon sector not programmed or protected at the factory unless otherwise specified, the device is shipped such that the customer may program and protect the 256-byte secured silicon sector. the system may program the secured silicon sector using the write-buffer, accelerated and/or unlock by- pass methods, in addition to the standard program- ming command sequence. see command definitions . programming and protecting the secured silicon sec- tor must be used with caution since, once protected, there is no procedure available for unprotecting the secured silicon sect or area and none of the bits in the secured silicon sector memory space can be modi- fied in any way. the secured silicon sector area can be protected using one of the following procedures: write the three-cycle enter secured silicon sector region command sequence, and then follow the in-system sector protect algorithm as shown in fig- ure 2, except that reset# may be at either v ih or v id . this allows in-system protection of the secured silicon sector without raising any device pin to a high voltage. note that this method is only applica- ble to the secured silicon sector. to verify the protect/unprotect status of the secured silicon sector, follow the algorithm shown in figure 3. once the secured silicon sector is programmed, locked and verified, the system must write the exit se- cured silicon sector re gion command sequence to return to reading and writing within the remainder of the array. factory locked: secured silicon sector programmed and protected at the factory in devices with an esn, the secured silicon sector is protected when the device is shipped from the factory. the secured silicon sector cannot be modified in any way. an esn factory locked device has an 16-byte random esn at addresses 000000h?000007h. please contact your local amd sale s representative for details on ordering esn factory locked devices. customers may opt to have their code programmed by amd through the amd expre ssflash service (express flash factory locked). the devices are then shipped from amd?s factory with the secured silicon sector permanently locked. contact an amd representative for details on using amd?s expressflash service. table 5. secured silicon sector contents secured silicon sector address range customer lockable esn factory locked expressflash factory locked 000000h?000007h determined by customer esn esn or determined by customer 000008h?00007fh unavailable determined by customer
20 am29lv320mh/l 26517b4 january 31, 2007 data sheet figure 3. secured silicon sector protect verify hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to tables 10 and 11 for command definitions). in addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not ac- cept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets to the read mode. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent unintentional writes when v cc is greater than v lko . write pulse ?glitch? protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept commands on the rising edge of we#. the internal state machine is automati- cally reset to the read mode on power-up. common flash memory interface (cfi) the common flash interface (cfi) specification out- lines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. software support can then be device-inde- pendent, jedec id-independent, and forward- and backward-compatible for the specified flash device families. flash vendors can standardize their existing interfaces for long-term compatibility. this device enters the cf i query mode when the sys- tem writes the cfi query command, 98h, to address 55h, any time the device is ready to read array data. the system can read cfi information at the addresses given in tables 6 ? 9 . to terminate reading cfi data, the system must write the reset command. the system can also write the cfi query command when the device is in the autoselect mode. the device enters the cfi query mode, and the system can read cfi data at the addresses given in tables 6 ? 9 . the system must write the reset command to return the device to reading array data. for further information, plea se refer to the cfi specifi- cation and cfi publication 100, available via the world wide web at http://www.amd.com/flash/cfi. alterna- tively, contact an amd representative for copies of these documents. write 60h to any address write 40h to secsi sector address with a6 = 0, a1 = 1, a0 = 0 start reset# = v ih or v id wait 1 s read from secsi sector address with a6 = 0, a1 = 1, a0 = 0 if data = 00h, secsi sector is unprotected. if data = 01h, secsi sector is protected. remove v ih or v id from reset# write reset command secsi sector protect verify complete
january 31, 2007 26517b4 am29lv320mh/l 21 data sheet table 6. cfi query identification string table 7. system interface string addresses (x16) addresses (x8) data description 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h query unique ascii string ?qry? 13h 14h 26h 28h 0002h 0000h primary oem command set 15h 16h 2ah 2ch 0040h 0000h address for primary extended table 17h 18h 2eh 30h 0000h 0000h alternate oem command set (00h = none exists) 19h 1ah 32h 34h 0000h 0000h address for alternate oem extended table (00h = none exists) addresses (x16) addresses (x8) data description 1bh 36h 0027h v cc min. (write/erase) d7?d4: volt, d3?d0: 100 millivolt 1ch 38h 0036h v cc max. (write/erase) d7?d4: volt, d3?d0: 100 millivolt 1dh 3ah 0000h v pp min. voltage (00h = no v pp pin present) 1eh 3ch 0000h v pp max. voltage (00h = no v pp pin present) 1fh 3eh 0007h typical timeout per single byte/word write 2 n s 20h 40h 0007h typical timeout for min. size buffer write 2 n s (00h = not supported) 21h 42h 000ah typical timeout per individual block erase 2 n ms 22h 44h 0000h typical timeout for full chip erase 2 n ms (00h = not supported) 23h 46h 0001h max. timeout for byte/word write 2 n times typical 24h 48h 0005h max. timeout for buffer write 2 n times typical 25h 4ah 0004h max. timeout per individual block erase 2 n times typical 26h 4ch 0000h max. timeout for full chip erase 2 n times typical (00h = not supported)
22 am29lv320mh/l 26517b4 january 31, 2007 data sheet table 8. device geometry definition addresses (x16) addresses (x8) data description 27h 4eh 0016h device size = 2 n byte 28h 29h 50h 52h 0002h 0000h flash device interface description (refer to cfi publication 100) 2ah 2bh 54h 56h 0005h 0000h max. number of byte in multi-byte write = 2 n (00h = not supported) 2ch 58h 0001h number of erase block regions within device (01h = uniform device, 02h = boot device) 2dh 2eh 2fh 30h 5ah 5ch 5eh 60h 003fh 0000h 0000h 0001h erase block region 1 information (refer to the cfi specification or cfi publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 0000h 0000h 0000h 0000h erase block region 2 information (refer to cfi publication 100) 35h 36h 37h 38h 6ah 6ch 6eh 70h 0000h 0000h 0000h 0000h erase block region 3 information (refer to cfi publication 100) 39h 3ah 3bh 3ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h erase block region 4 information (refer to cfi publication 100)
january 31, 2007 26517b4 am29lv320mh/l 23 data sheet table 9. primary vendor-specific extended query addresses (x16) addresses (x8) data description 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h query-unique ascii string ?pri? 43h 86h 0031h major version number, ascii 44h 88h 0033h minor version number, ascii 45h 8ah 0008h address sensitive unlock (bits 1-0) 0 = required, 1 = not required process technology (bits 7- 2) 0010b = 0.23 m mirrorbit 46h 8ch 0002h erase suspend 0 = not supported, 1 = to read only, 2 = to read & write 47h 8eh 0001h sector protect 0 = not supported, x = number of sectors in per group 48h 90h 0001h sector temporary unprotect 00 = not supported, 01 = supported 49h 92h 0004h sector protect/ unprotect scheme 04 = 29lv800 mode 4ah 94h 0000h simultaneous operation 00 = not supported, x = number of sectors in bank 4bh 96h 0000h burst mode type 00 = not supported, 01 = supported 4ch 98h 0001h page mode type 00 = not supported, 01 = 4 word/8 byte page, 02 = 8 word/16 byte page 4dh 9ah 00b5h acc (acceleration) supply minimum 00h = not supported, d7-d4: volt, d3-d0: 100 mv 4eh 9ch 00c5h acc (acceleration) supply maximum 00h = not supported, d7-d4: volt, d3-d0: 100 mv 4fh 9eh 0004h/ 0005h top/bottom boot sector flag 00h = uniform device without wp# protect, 02h = bottom boot device, 03h = top boot device, 04h = uniform sectors bottom wp# protect, 05h = uniform sectors top wp# protect 50h a0h 0001h program suspend 00h = not supported, 01h = supported
24 am29lv320mh/l 26517b4 january 31, 2007 data sheet command definitions writing specific address and data commands or se- quences into the command register initiates device op- erations. tables 10 and 11 define the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. a reset command is then required to return the device to read- ing array data. all addresses are latched on the falling edge of we# or ce#, whichever happens la ter. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the ac characteristics section for timing diagrams. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. after completing a pro- gramming operation in the erase suspend mode, the system may once again read array data with the same exception. see the erase suspend/erase resume commands section for more information. the system must issue the reset command to return the device to the read (or erase-suspend-read) mode if dq5 goes high during an active program or erase op- eration, or if the device is in the autoselect mode. see the next section, reset command , for more informa- tion. see also requirements for reading array data in the device bus operations section for more information. the read-only operations table provides the read pa- rameters, and figure 13 shows the timing diagram. reset command writing the reset command resets the device to the read or erase-suspend-read mode. address bits are don?t cares for this command. the reset command may be written between the se- quence cycles in an erase command sequence before erasing begins. this resets the device to the read mode. once erasure begins, however, the device ig- nores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a pr ogram command sequence before programming begins. this resets the device to the read mode. if the program command sequence is written while the device is in the erase suspend mode, writing the reset command returns the device to the erase-suspend-read mode. once programming be- gins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the se- quence cycles in an aut oselect command sequence. once in the autoselect mode, the reset command must be written to return to the read mode. if the de- vice entered the autoselect mode while in the erase suspend mode, writing the reset command returns the device to the erase-suspend-read mode. if dq5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in erase suspend). note that if dq1 goes high during a write buffer pro- gramming operation, the system must write the write-to-buffer-abort reset command sequence to reset the device for the next operation. autoselect command sequence the autoselect command sequence allows the host system to read several identifier codes at specific ad- dresses: note: the device id is read over three cycles. sa = sector address ta bl e s 10 and 11 show the address requirements and codes. this method is an alternative to that shown in ta bl e 3 , which is intended for prom programmers and requires v id on address pin a9. the autoselect command sequence may be written to an address that is either in the read or erase-suspend-read mode. the autoselect command may not be written while the de- vice is actively programming or erasing. the autoselect command sequence is initiated by first writing two unlock cycles. this is followed by a third write cycle that contains the autoselect command. the device then enters the autoselect mode. the system may read at any address any number of times without initiating another autoselect command sequence: the system must write the reset command to return to the read mode (or erase-suspend-read mode if the de- vice was previously in erase suspend). identifier code a7:a0 (x16) a6:a-1 (x8) manufacturer id 00h 00h device id, cycle 1 01h 02h device id, cycle 2 0eh 1ch device id, cycle 3 0fh 1eh secured silicon sector factory protect 03h 06h sector protect verify (sa)02h (sa)04h
january 31, 2007 26517b4 am29lv320mh/l 25 data sheet enter secured silicon sector/exit secured silicon sector command sequence the secured silicon sector region provides a secured data area containing an 8-word/16-byte random elec- tronic serial number (esn). the system can access the secured silicon sector region by issuing the three-cycle enter secured silicon sector command sequence. the device continues to access the se- cured silicon sector region until the system issues the four-cycle exit secured s ilicon sector command se- quence. the exit secured silicon sector command sequence returns the device to normal operation. ta- bles 10 and 11 show the address and data require- ments for both command sequences. see also ?secured silicon sector flash memory region? for fur- ther information. note that the acc function and un- lock bypass modes are not available when the secured silicon sector is enabled. word/byte program command sequence programming is a four-bus-cycle operation. the pro- gram command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program al- gorithm. the system is not required to provide further controls or timings. the device automatically provides internally generated program pulses and verifies the programmed cell margin. tables 10 and 11 show the address and data requirements for the word/byte pro- gram command sequence, respectively. note that the secured silicon sector, auto select, and cfi functions are unavailable when a program operation is in progress. when the embedded program algorithm is complete, the device then returns to the read mode and ad- dresses are no longer latched. the system can deter- mine the status of the program operation by using dq7 or dq6. refer to the write operation status sec- tion for information on these status bits. any commands written to the device during the em- bedded program algorithm are ignored. note that a hardware reset immediately terminates the program operation. the program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from ?0? back to a ?1.? attempting to do so may cause the device to set dq5 = 1, or cause the dq7 and dq6 status bits to indicate the operation was suc- cessful. however, a succeedin g read will show that the data is still ?0.? only erase operations can convert a ?0? to a ?1.? unlock bypass command sequence the unlock bypass feature allows the system to pro- gram words to the device faster than using the stan- dard program command sequence. the unlock bypass command sequence is initiated by first writing two un- lock cycles. this is followed by a third write cycle con- taining the unlock bypass command, 20h. the device then enters the unlock bypass mode. a two-cycle un- lock bypass program command sequence is all that is required to program in this mode. the first cycle in this sequence contains the unlock bypass program com- mand, a0h; the second cycle contains the program address and data. additional data is programmed in the same manner. this mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total program- ming time. tables 10 and 11 show the requirements for the command sequence. during the unlock bypass mode, only the unlock by- pass program and unlock bypass reset commands are valid. to exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset com- mand sequence. the first cycle must contain the data 90h. the second cycle must contain the data 00h. the device then returns to the read mode. write buffer programming write buffer programming allows the system write to a maximum of 16 words/32 bytes in one programming operation. this results in faster effective programming time than the standard programming algorithms. the write buffer programming command sequence is initi- ated by first writing two unlock cycles. this is followed by a third write cycle containing the write buffer load command written at the sector address in which pro- gramming will occur. the fourth cycle writes the sector address and the number of word locations, minus one, to be programmed. for exam ple, if the system will pro- gram 6 unique address locations, then 05h should be written to the device. this tells the device how many write buffer addresses will be loaded with data and therefore when to expect the program buffer to flash command. the number of locations to program cannot exceed the size of the writ e buffer or the operation will abort. the fifth cycle writes the first address location and data to be programmed. the write-buffer-page is se- lected by address bits a max ?a 4 . all subsequent ad- dress/data pairs must fall within the selected-write-buffer-page. the system then writes the remaining address/data pairs into the write buffer. write buffer locations may be loaded in any order. the write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (this means write buffer programming cannot be per- formed across multiple write-buffer pages. this also
26 am29lv320mh/l 26517b4 january 31, 2007 data sheet means that write buffer programming cannot be per- formed across multiple sect ors. if the system attempts to load programming data outside of the selected write-buffer page, th e operation will abort. note that if a write buffer address location is loaded multiple times, the address/data pair counter will be decremented for every data load operation. the host system must therefore account for loading a write-buffer location more than once. the counter dec- rements for each data load operation, not for each unique write-buffer-address location. note also that if an address location is loaded more than once into the buffer, the final data loaded for that address will be programmed. once the specified number of write buffer locations have been loaded, the system must then write the pro- gram buffer to flash command at the sector address. any other address and data combination aborts the write buffer programming operation. the device then begins programming. data polling should be used while monitoring the last add ress location loaded into the write buffer. dq7, dq6, dq5, and dq1 should be monitored to determine the device status during write buffer programming. the write-buffer programming operation can be sus- pended using the standard program suspend/resume commands. upon successful completion of the write buffer programming operation, the device is ready to execute the next command. the write buffer programming sequence can be aborted in the following ways: load a value that is greater than the page buffer size during the number of locations to program step. write to an address in a sector different than the one specified during the write-buffer-load com- mand. write an address/data pair to a different write-buffer-page than the one selected by the starting address during the write buffer data load- ing stage of the operation. write data other than the confirm command after the specified number of data load cycles. the abort condition is indicated by dq1 = 1, dq7 = data# (for the last address location loaded), dq6 = toggle, and dq5=0. a write-to-buffer-abort reset command sequence must be written to reset the de- vice for the next operation. note that the full 3-cycle write-to-buffer-abort reset command sequence is re- quired when using write-buffer-programming features in unlock bypass mode. accelerated program the device offers accelerated program operations through the wp#/acc pin. when the system asserts v hh on the wp#/acc pin, the device automatically en- ters the unlock bypass mode. the system may then write the two-cycle unlock bypass program command sequence. the device uses the higher voltage on the wp#/acc pin to accelerate the operation. note that the wp#/ acc pin must not be at v hh for operations other than accelerated programming, or device dam- age may result. in addition, no external pullup is nec- essary since the wp#/acc pin has internal pullup to v cc . figure 5 illustrates the algorithm for the program oper- ation. refer to the erase and program operations table in the ac characteristics section for parameters, and figure 17 for timing diagrams.
january 31, 2007 26517b4 am29lv320mh/l 27 data sheet figure 4. write buffer programming operation write ?write to buffer? command and sector address write number of addresses to program minus 1(wc) and sector address write program buffer to flash sector address write first address/data write to a different sector address fail or abort pass read dq7 - dq0 at last loaded address read dq7 - dq0 with address = last loaded address write next address/data pair wc = wc - 1 wc = 0 ? part of ?write to buffer? command sequence ye s ye s ye s ye s ye s ye s no no no no no no abort write to buffer operation? dq7 = data? dq7 = data? dq5 = 1? dq1 = 1? write to buffer aborted. must write ?write-to-buffer abort reset? command sequence to return to read mode. notes: 1. when sector address is specified, any address in the selected sector is acceptable. however, when loading write-buffer address locations with data, all addresses must fall within the selected write-buffer page. 2. dq7 may change simultaneously with dq5. therefore, dq7 should be verified. 3. if this flowchart location was reached because dq5= ?1?, then the device failed. if this flowchart location was reached because dq1= ?1?, then the write to buffer operation was aborted. in either case, the proper reset command must be written before the device can begin another operation. if dq1=1, write the write-buffer-programming-abort-reset command. if dq5=1, write the reset command. 4. see ta b l e 1 1 for command sequences required for write buffer programming. (note 3) (note 1) (note 2)
28 am29lv320mh/l 26517b4 january 31, 2007 data sheet figure 5. program operation program suspend/pr ogram resume command sequence the program suspend command allows the system to interrupt a programming operation or a write to buffer programming operation so that data can be read from any non-suspended sector. when the program sus- pend command is written during a programming pro- cess, the device halts the program operation within 15 s (maximum) 5 s typical and updates the status bits. addresses are not required when writing the program suspend command. after the programming operation has been sus- pended, the system can read array data from any non-suspended sector. the program suspend com- mand may also be issued during a programming oper- ation while an erase is suspended. in this case, data may be read from any addresses not in erase sus- pend or program suspend. if a read is needed from the secured silicon sector area (one-time program area), then user must use the proper command se- quences to enter and exit this region. the system may also writ e the autoselect command sequence when the device is in the program suspend mode. the system can read as many autoselect codes as required. when the device exits the autoselect mode, the device reverts to the program suspend mode, and is ready for another valid operation. see autoselect command sequence for more information. after the program resume command is written, the device reverts to programming. the system can deter- mine the status of the program operation using the dq7 or dq6 status bits, just as in the standard pro- gram operation. see write operation status for more information. the system must write th e program resume com- mand (address bits are don?t care) to exit the program suspend mode and continue the programming opera- tion. further writes of the resume command are ig- nored. another program suspend command can be written after the device has resume programming. start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress note: see tables 10 and 11 for program command sequence.
january 31, 2007 26517b4 am29lv320mh/l 29 data sheet figure 6. program suspend/program resume chip erase command sequence chip erase is a six bus cycle operation. the chip erase command sequence is initia ted by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any con- trols or timings during these operations. tables 10 and 11 show the address and data requirements for the chip erase command sequence. note that the secured silicon sector, autoselect, and cfi functions are un- available when a erase operation is in progress. when the embedded erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, or dq2. refer to the write operation status section for infor- mation on these status bits. any commands written during the chip erase operation are ignored. however, note that a hardware reset im- mediately terminates the erase operation. if that oc- curs, the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. figure 7 illustrates the algorithm for the erase opera- tion. refer to the erase and program operations ta- bles in the ac characteristics section for parameters, and figure 19 section for timing diagrams. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two ad- ditional unlock cycles are written, and are then fol- lowed by the address of the sector to be erased, and the sector erase command. tables 10 and 11 show the address and data requirements for the sector erase command sequence. note that the secured silicon sector, autoselect, and cfi functions are unavailable when a erase operation is in progress. the device does not require the system to preprogram prior to erase. the embedded erase algorithm auto- matically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or tim- ings during these operations. after the command sequence is written, a sector erase time-out of 50 s occurs. during the time-out period, additional sector addresses and sector erase com- mands may be written. loading the sector erase buffer may be done in any sequence, and the number of sec- tors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise erasure may begin. any sector erase ad- dress and command following the exceeded time-out may or may not be accepted. it is recommended that processor interrupts be disabled during this time to en- sure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. any command other than sector erase or erase suspend during the time-out period resets the device to the read mode. the system must re- write the command sequence and any additional ad- dresses and commands. program operation or write-to-buffer sequence in progress write program suspend command sequence command is also valid for erase-suspended-program operations autoselect and secsi sector read operations are also allowed data cannot be read from erase- o r program-suspended sectors write program resume command sequence read data as required done reading? no yes write address/data xxxh/30h device reverts to operation prior to program suspend write address/data xxxh/b0h wait 15 s
30 am29lv320mh/l 26517b4 january 31, 2007 data sheet the system can monitor dq3 to determine if the sec- tor erase timer has timed out (see the section on dq3: sector erase timer.). the time-out begins from the ris- ing edge of the final we# pulse in the command sequence. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by reading dq7, dq6, or dq2 in the erasing sector. refer to the write opera- tion status section for information on these status bits. once the sector erase operation has begun, only the erase suspend command is valid. all other com- mands are ignored. however, note that a hardware reset immediately terminates the erase operation. if that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. figure 7 illustrates the algorithm for the erase opera- tion. refer to the erase and program operations ta- bles in the ac characterist ics section for parameters, and figure 19 section for timing diagrams. erase suspend/erase resume commands the erase suspend command, b0h, allows the sys- tem to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sec- tor erase operation, including the 50 s time-out pe- riod during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algorithm. when the erase suspend command is written during the sector erase operation, the device requires a typi- cal of 5 s (maximum of 20 s) to suspend the erase operation. however, when the erase suspend com- mand is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. after the erase operation has been suspended, the device enters the erase-su spend-read mode. the sys- tem can read data from or program data to any sector not selected for erasure. (the device ?erase sus- pends? all sectors selected for erasure.) reading at any address within erase-suspended sectors pro- duces status information on dq7?dq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-suspended. refer to the write operation status section for infor- mation on these status bits. after an erase-suspended program operation is com- plete, the device returns to the erase-suspend-read mode. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard word program operation. refer to the write operation status section for more information. in the erase-suspend-read mode, the system can also issue the autoselect command sequence. refer to the autoselect mode and autoselect command sequence sections for details. to resume the sector erase operation, the system must write the erase resume command. further writes of the resume command are ignored. another erase suspend command can be written after the chip has resumed erasing. note: during an erase operation, this flash device per- forms multiple internal operations which are invisible to the system. when an erase operation is suspended, any of the internal operations that were not fully com- pleted must be restarted. as such, if this flash device is continually issued suspend/resume commands in rapid succession, erase progress will be impeded as a function of the number of suspends. the result will be a longer cumulative erase time than without suspends. note that the additional suspends do not affect device reliability or future performa nce. in most systems rapid erase/suspend activity occurs only briefly. in such cases, erase performance will not be significantly im- pacted. figure 7. erase operation start write erase command sequence (notes 1, 2) data poll to erasing bank from system data = ffh? no yes erasure completed embedded erase algorithm in progress notes: 1. see tables 10 and 11 for erase command sequence. 2. see the section on dq3 for information on the sector erase timer.
january 31, 2007 26517b4 am29lv320mh/l 31 data sheet command definitions table 10. command definitions (x16 mode, byte# = v ih ) legend: x = don?t care ra = read address of memory location to be read. rd = read data read from location ra during read operation. pa = program address. addresses latch on falling edge of we# or ce# pulse, whichever happens later. pd = program data for location pa. data latches on rising edge of we# or ce# pulse, whichever happens first. sa = sector address of sector to be verified (in autoselect mode) or erased. address bits a20?a15 uniquely select any sector. wbl = write buffer location. address must be within same write buffer page as pa. wc = word count. number of write buffer locations to load minus 1. notes: 1. see ta b l e 1 for description of bus operations. 2. all values are in hexadecimal. 3. shaded cells indicate read cycles. all others are write cycles. 4. during unlock and command cycles, when lower address bits are 555 or 2aa as shown in table, address bits above a11 and data bits above dq7 are don?t care. 5. no unlock or command cycles required when device is in read mode. 6. reset command is required to return to read mode (or to erase-suspend-read mode if previously in erase suspend) when device is in autoselect mode, or if dq5 goes high while device is providing status information. 7. fourth cycle of the autoselect command sequence is a read cycle. data bits dq15?dq8 are don?t care. except for rd, pd, and wc. see autoselect command sequence section for more information. 8. device id must be read in three cycles. 9. if wp# protects highest address sector, data is 98h for factory locked and 18h for not factory locked. if wp# protects lowest address sector, data is 88h for factory locked and 08h for not factor locked. 10. data is 00h for an unprotected sector group and 01h for a protected sector group. 11. total number of cycles in command sequence is determined by number of words written to write buffer. maximum number of cycles in command sequence is 21. 12. command sequence resets device for next command after aborted write-to-buffer operation. 13. unlock bypass command is required prior to unlock bypass program command. 14. unlock bypass reset command is required to return to read mode when device is in unlock bypass mode. 15. system may read and program in non-erasing sectors, or enter autoselect mode, when in erase suspend mode. erase suspend command is valid only during a sector erase operation. 16. erase resume command is valid only during erase suspend mode. 17. command is valid when device is ready to read array data or when device is in autoselect mode. command sequence (note 1) cycles bus cycles (notes 2?5) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 5) 1 ra rd reset (note 6) 1 xxx f0 autoselect (note 7) manufacturer id 4 555 aa 2aa 55 555 90 x00 0001 device id (note 8) 6 555 aa 2aa 55 555 90 x01 227e x0e xx1d x0f xx00 secured silicon sector factory protect (note 9) 4 555 aa 2aa 55 555 90 x03 (note 9) sector group protect verify (note 10) 4 555 aa 2aa 55 555 90 (sa)x02 00/01 enter secured silicon sector region 3 555 aa 2aa 55 555 88 exit secured silicon sector region 4 555 aa 2aa 55 555 90 xxx 00 program 4 555 aa 2aa 55 555 a0 pa pd write to buffer (note 11) 6 555 aa 2aa 55 sa 25 sa wc pa pd wbl pd program buffer to flash 1 sa 29 write to buffer abort reset (note 12) 3 555 aa 2aa 55 555 f0 unlock bypass 3 555 aa 2aa 55 555 20 unlock bypass program (note 13) 2 xxx a0 pa pd unlock bypass reset (note 14) 2 xxx 90 xxx 00 chip erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 sector erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 program/erase suspend (note 15) 1 xxx b0 program/erase resume (note 16) 1 xxx 30 cfi query (note 17) 1 55 98
32 am29lv320mh/l 26517b4 january 31, 2007 data sheet table 11. command definitions (x8 mode, byte# = v il ) legend: x = don?t care ra = read address of memory location to be read. rd = read data read from location ra during read operation. pa = program address. addresses latch on falling edge of we# or ce# pulse, whichever happens later. pd = program data for location pa. data latches on rising edge of we# or ce# pulse, whichever happens first. sa = sector address of sector to be verified (in autoselect mode) or erased. address bits a20?a15 uniquely select any sector. wbl = write buffer location. address must be within same write buffer page as pa. bc = byte count. number of write buffer locations to load minus 1. notes: 1. see ta b l e 1 for description of bus operations. 2. all values are in hexadecimal. 3. shaded cells indicate read cycles. all others are write cycles. 4. during unlock and command cycles, when lower address bits are 555 or aaa as shown in table, address bits above a11 are don?t care. 5. unless otherwise noted, address bits a20?a11 are don?t cares. 6. no unlock or command cycles required when device is in read mode. 7. reset command is required to return to read mode (or to erase-suspend-read mode if previously in erase suspend) when device is in autoselect mode, or if dq5 goes high while device is providing status information. 8. fourth cycle of autoselect command sequence is a read cycle. data bits dq15?dq8 are don?t care. see autoselect command sequence section or more information. 9. device id must be read in three cycles. 10. if wp# protects highest address sector, data is 98h for factory locked and 18h for not factory locked. if wp# protects lowest address sector, data is 88h for factory locked and 08h for not factor locked. 11. data is 00h for an unprotected sector group and 01h for a protected sector group. 12. total number of cycles in command sequence is determined by number of words written to write buffer. maximum number of cycles in command sequence is 21. 13. command sequence resets device for next command after aborted write-to-buffer operation. 14. unlock bypass command is required prior to unlock bypass program command. 15. unlock bypass reset command is required to return to read mode when device is in unlock bypass mode. 16. system may read and program in non-erasing sectors, or enter autoselect mode, when in erase suspend mode. erase suspend command is valid only during a sector erase operation. 17. erase resume command is valid only during erase suspend mode. 18. command is valid when device is ready to read array data or when device is in autoselect mode. command sequence (note 1) cycles bus cycles (notes 2?5) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 autoselect (note 8) manufacturer id 4 aaa aa 555 55 aaa 90 x00 01 device id (note 9) 6 aaa aa 555 55 aaa 90 x02 7e x1c 1d x1e 00 secured silicon sector factory protect (note 10) 4 aaa aa 555 55 aaa 90 x06 (note 10) sector group protect verify (note 11) 4 aaa aa 555 55 aaa 90 (sa)x04 00/01 enter secured silicon sector region 3 aaa aa 555 55 aaa 88 exit secured silicon sector region 4 aaa aa 555 55 aaa 90 xxx 00 program 4 555 aa 2aa 55 555 a0 pa pd write to buffer (note 12) 6 aaa aa 555 55 sa 25 sa bc pa pd wbl pd program buffer to flash 1 sa 29 write to buffer abort reset (note 13) 3 aaa aa 555 55 aaa f0 unlock bypass 3 aaa aa 555 55 aaa 20 unlock bypass program (note 13) 2 xxx a0 pa pd unlock bypass reset (note 15) 2 xxx 90 xxx 00 chip erase 6 aaa aa 555 55 aaa 80 aaa aa 555 55 aaa 10 sector erase 6 aaa aa 555 55 aaa 80 aaa aa 555 55 sa 30 program/erase suspend (note 16) 1 xxx b0 program/erase resume (note 17) 1 xxx 30 cfi query (note 18) 1 aa 98
january 31, 2007 26517b4 am29lv320mh/l 33 data sheet write operation status the device provides several bits to determine the status of a program or erase operation: dq2, dq3, dq5, dq6, and dq7. table 12 and the following subsections describe the function of these bits. dq7 and dq6 each offer a method for determining whether a program or erase operation is com- plete or in progress. the device also provides a hard- ware-based output signal, ry/by#, to determine whether an embedded program or erase operation is in progress or has been completed. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded program or erase algorithm is in progress or completed, or whether the device is in erase suspend. data# polling is valid after the rising edge of the final we# pulse in the command sequence. during the embedded program algorithm, the device out- puts on dq7 the complement of the datum programmed to dq7. this dq7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to read valid status information on dq7. if a program address falls within a protected sector, data# polling on dq7 is ac- tive for approximately 1 s, then the device returns to the read mode. during the embedded erase algorithm, data# polling produces a ?0? on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a ?1? on dq7. the system must provide an address within any of the sectors selected for erasure to read valid status infor- mation on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# poll- ing on dq7 is active for approximately 100 s, then the device returns to the read mode. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the se- lected sectors that are protected. however, if the sys- tem reads dq7 at an address within a protected sector, the status may not be valid. just prior to the completion of an embedded program or erase operation, dq7 may change asynchronously with dq0?dq6 while output enable (oe#) is asserted low. that is, the device may change from providing status information to valid data on dq7. depending on when the system samples the dq7 output, it may read the status or valid data. even if the device has com- pleted the program or erase operation and dq7 has valid data, the data outputs on dq0?dq6 may be still invalid. valid data on dq0?dq7 will appear on suc- cessive read cycles. table 12 shows the outputs for data# polling on dq7. figure 8 shows the data# po lling algorithm. figure 20 in the ac characteristics section shows the data# polling timing diagram. figure 8. data# polling algorithm dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7?dq0 addr = va read dq7?dq0 addr = va dq7 = data? start notes: 1. va = valid address for programming. during a sector erase operation, a valid address is any sector address within the sector being eras ed. during chip erase, a valid address is any non- protected sector address. 2. dq7 should be rechecked even if dq5 = ?1? because dq7 may change simultaneously with dq5.
34 am29lv320mh/l 26517b4 january 31, 2007 data sheet ry/by#: ready/busy# the ry/by# is a dedicated, open-drain output pin which indicates whether an embedded algorithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, sev- eral ry/by# pins can be tied together in parallel with a pull-up resistor to v cc . if the output is low (busy), the device is actively eras- ing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is in the read mode, the standby mode, or in the erase-suspend-read mode. table 12 shows the outputs for ry/by#. dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or com- plete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any ad- dress, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm op- eration, successive read c ycles to any address cause dq6 to toggle. the system may use either oe# or ce# to control the read cycles. when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approxi- mately 100 s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algo- rithm erases the unprotected sectors, and ignores the se- lected sectors that are protected. the system can use dq6 and dq2 together to determine whether a sector is actively erasing or is erase-suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the de- vice enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alterna- tively, the system can use dq7 (see the subsection on dq7: data# polling ). if a program address falls within a protected sector, dq6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded pro- gram algorithm is complete. table 12 shows the outputs for toggle bit i on dq6. figure 9 shows the toggle bit algorithm. figure 21 in the ?ac characteristics? section shows the toggle bit timing diagrams. figure 22 shows the differences be- tween dq2 and dq6 in graphical form. see also the subsection on dq2: toggle bit ii .
january 31, 2007 26517b4 am29lv320mh/l 35 data sheet figure 9. toggle bit algorithm dq2: toggle bit ii the ?toggle bit ii? on dq2, when used with dq6, indi- cates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. (the system may use either oe# or ce# to con- trol the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-sus- pended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for era- sure. thus, both status bits are required for sector and mode information. refer to ta b l e 1 2 to compare out- puts for dq2 and dq6. figure 9 shows the toggle bit algorithm in flowchart form, and the section ?dq2: toggle bit ii? explains the algorithm. see also the ry/by#: ready/busy# sub- section. figure 21 shows the toggle bit timing diagram. figure 22 shows the differences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 9 for the following discussion. when- ever the system initially begins reading toggle bit sta- tus, it must read dq7?dq0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the tog- gle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on dq7?dq0 on the fol- lowing read cycle. however, if after the initia l two read cycles, the system determines that the toggle bit is still toggling, the sys- tem also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is tog- gling, since the toggle bit may have stopped toggling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the de- vice did not completed the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that the system initially de- termines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cy- cles, determining the status as described in the previ- ous paragraph. alternatively, it may choose to perform start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7?dq0 toggle bit = toggle? read dq7?dq0 twice read dq7?dq0 note: the system should recheck the toggle bit even if dq5 = ?1? because the toggle bit may stop toggling as dq5 changes to ?1.? see the subsections on dq6 and dq2 for more information.
36 am29lv320mh/l 26517b4 january 31, 2007 data sheet other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to de- termine the status of the operation (top of figure 9). dq5: exceeded timing limits dq5 indicates whether the program, erase, or write-to-buffer time has exceeded a specified internal pulse count limit. under these conditions dq5 produces a ?1,? indicating that the program or erase cycle was not suc- cessfully completed. the device may output a ?1? on dq5 if the system tries to program a ?1? to a location that was previously pro- grammed to ?0.? only an erase operation can change a ?0? back to a ?1.? under this condition, the device halts the operation, and when the timing limit has been exceeded, dq5 produces a ?1.? in all these cases, the system must write the reset command to return the device to the reading the array (or to erase-suspend-read if the device was previously in the erase-suspend-program mode). dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to de termine whether or not erasure has begun. (the sector erase timer does not apply to the chip erase command.) if additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase com- mand. when the time-out period is complete, dq3 switches from a ?0? to a ?1.? if the time between addi- tional sector erase commands from the system can be assumed to be less than 50 s, the system need not monitor dq3. see also the sector erase command sequence section. after the sector erase command is written, the system should read the status of dq7 (data# polling) or dq6 (toggle bit i) to ensure that the device has accepted the command sequence, and then read dq3. if dq3 is ?1,? the embedded erase algorithm has begun; all fur- ther commands (except erase suspend) are ignored until the erase operation is complete. if dq3 is ?0,? the device will accept additional sector erase commands. to ensure the command has been accepted, the sys- tem software should check the status of dq3 prior to and following each subsequent sector erase com- mand. if dq3 is high on the second status check, the last command might not have been accepted. ta b l e 1 2 shows the status of dq3 relative to the other status bits. dq1: write-to-buffer abort dq1 indicates whether a write-to-buffer operation was aborted. under these conditions dq1 produces a ?1?. the system must issue the write-to-buffer-abort-reset command sequence to re- turn the device to reading array data. see write buffer table 12. write operation status notes: 1. dq5 switches to ?1? when an embedded program, embedde d erase, or write-to-buffer operation has exceeded the maximum timing limits. re fer to the section on dq5 for more information. 2. dq7 and dq2 require a valid address when reading status inform ation. refer to the appropriate subsection for further details. 3. the data# polling algorithm should be used to monitor the last loaded write-buffer address location. 4. dq1 switches to ?1? when the device has aborted the write-to-buffer operation. status dq7 (note 2) dq6 dq5 (note 1) dq3 dq2 (note 2) dq1 ry/by# standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 0 embedded erase algorithm 0 toggle 0 1 toggle n/a 0 program suspend mode program- suspend read program-suspended sector invalid (not allowed) 1 non-program suspended sector data 1 erase suspend mode erase- suspend read erase-suspended sector 1 no toggle 0 n/a toggle n/a 1 non-erase suspended sector data 1 erase-suspend-program (embedded program) dq7# toggle 0 n/a n/a n/a 0 write-to- buffer busy (note 3) dq7# toggle 0 n/a n/a 0 0 abort (note 4) dq7# toggle 0 n/a n/a 1 0
january 31, 2007 26517b4 am29lv320mh/l 37 data sheet absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . . ?65 c to +150 c ambient temperature with power applied. . . . . . . . . . . . . . ?65 c to +125 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . . ?0.5 v to +4.0 v v io . . . . . . . . . . . . . . . . . . . . . . . . . ?0.5 v to +4.0 v a9 , oe#, acc, and reset# (note 2) . . . . . . . . . . . . . . . . . . . . ?0.5 v to +12.5 v all other pins (note 1) . . . . . . ?0.5 v to v cc +0.5 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to ?2.0 v for periods of up to 20 ns. maximum dc voltage on input or i/o pins is v cc +0.5 v. see figure 10. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 11. 2. minimum dc input voltage on pins a9, oe#, acc, and reset# is ?0.5 v. during voltage transitions, a9, oe#, acc, and reset# may overshoot v ss to ?2.0 v for periods of up to 20 ns. see figure 10. maximum dc input voltage on pin a9, oe#, acc, and reset# is +12.5 v which may overshoot to +14.0 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only; functi onal operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. operating ranges industrial (i) devices ambient temperature (t a ) . . . . . . . . . ?40c to +85c supply voltages v cc full voltage range. . . . . . . . . . . . . . . . . . 2.7?3.6 v v cc regulated voltage range . . . . . . . . . . . . 3.0?3.6 v v io (note 2) . . . . . . . . . . . . . . . . . . . . . . . . 1.65?3.6 v notes: 1. operating ranges define those limits between which the functionality of the device is guaranteed. 2. see ordering information section for valid v cc /v io range combinations. the i/os will not operate at 3 v when v io = 1.8 v. 20 ns 20 ns +0.8 v ?0.5 v 20 ns ?2.0 v figure 10. maximum negative overshoot waveform 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v figure 11. maximum positive overshoot waveform
38 am29lv320mh/l 26517b4 january 31, 2007 data sheet dc characteristics cmos compatible notes: 1. on the wp#/acc pin only, the maximum input load current when wp# = v il is 5.0 a. 2. the i cc current listed is typically le ss than 2 ma/mhz, with oe# at v ih . 3. maximum i cc specifications are tested with v cc = v cc max. 4. i cc active while embedded erase or embedded program is in progress. 5. automatic sleep mode enables the low power mode when addresses remain stable for t acc + 30 ns. tif v io < v cc , maximum v il for ce# and dq i/os is 0.3 v io . if v io < v cc , minimum v ih for ce# and dq i/os is 0.7 v io . maximum v ih for these connections is v io + 0.3 v 6. v cc voltage requirements. 7. v io voltage requirements. 8. not 100% tested. 9. includes ry/by# parameter symbol parameter description (notes) test conditions min typ max unit i li input load current (1) v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, acc input load current v cc = v cc max ; a9 = 12.5 v 35 a i lr reset leakage current v cc = v cc max ; reset# = 12.5 v 35 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (2, 3) ce# = v il, oe# = v ih , 5 mhz 3 34 ma 1 mhz 13 43 i cc2 v cc initial page read current (2, 3) ce# = v il, oe# = v ih 1 mhz 4 50 ma 10 mhz 40 80 i cc3 v cc intra-page read current (2, 3) ce# = v il, oe# = v ih 10 mhz 3 20 33 mhz 6 40 ma i cc4 v cc active write current (3, 4) ce# = v il, oe# = v ih 50 60 ma i cc5 v cc standby current (3) ce#, reset# = v cc 0.3 v, wp# = v ih 15a i cc6 v cc reset current (3) reset# = v ss 0.3 v, wp# = v ih 15a i cc7 automatic sleep mode (3, 5) v ih = v cc 0.3 v; v il = v ss 0.3 v, wp# = v ih 15a v il1 input low voltage 1(5, 6) ?0.5 0.8 v v ih1 input high voltage 1 (5, 6) 1.9 v cc + 0.5 v v il2 input low voltage 2 (5, 7) ?0.5 0.3 x v io v v ih2 input high voltage 2 (5, 7) 1.9 v io + 0.5 v v hh voltage for acc program acceleration v cc = 2.7 ?3.6 v 11.5 12.5 v v id voltage for autoselect and temporary sector unprotect v cc = 2.7 ?3.6 v 11.5 12.5 v v ol output low voltage i ol = 4.0 ma, v cc = v cc min = v io 0.15 x v io v v oh1 output high voltage i oh = ?2.0 ma, v cc = v cc min = v io 0.85 v io v v oh2 i oh = ?100 a, v cc = v cc min = v io v io ?0.4 v v lko low v cc lock-out voltage (8) 2.3 2.5 v v il1 input low voltage 1(5, 6) ?0.5 0.8 v
january 31, 2007 26517b4 am29lv320mh/l 39 data sheet test conditions table 13. test specifications note: if v io < v cc , the reference level is 0.5 v io . key to switching waveforms 2.7 k c l 6.2 k 3.3 v device under te s t note: diodes are in3064 or equivalent figure 12. test setup test condition all speeds unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 pf input rise and fall times 5 ns input pulse levels 0.0?3.0 v input timing measurement reference levels (see note) 1.5 v output timing measurement reference levels 0.5 v io v waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high z) 3.0 v 0.0 v 1.5 v 0.5 v io v output measurement level input note: if v io < v cc , the input measurement reference level is 0.5 v io . figure 13. input waveforms and measurement levels
40 am29lv320mh/l 26517b4 january 31, 2007 data sheet ac characteristics read-only operations notes: 1. not 100% tested. 2. see figure 12 and ta b l e 1 3 for test specifications. 3. ac specifications listed are tested with vio = vcc. contact amd for information on ac operation vio vcc. parameter description test setup speed options jedec std. 90r 101, 101r 112r 112 120r 120 unit t avav t rc read cycle time (note 1) min 90 100 110 120 ns t avqv t acc address to output delay ce#, oe# = v il max 90 100 110 120 ns t elqv t ce chip enable to output delay oe# = v il max 90 100 110 120 ns t pac c page access time max253030403040ns t glqv t oe output enable to output delay max253030403040ns t ehqz t df chip enable to output high z (note 1) max 16 ns t ghqz t df output enable to output high z (note 1) max 16 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first min 0 ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 10 ns t oh t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t rh t oe t rh 0 v ry/by# reset# t df figure 14. read operation timing
january 31, 2007 26517b4 am29lv320mh/l 41 data sheet ac characteristics * figure shows device in word mode. addresses are a1?a-1 for byte mode. figure 15. page read timings a21 - a2 ce# oe# a1 - a0 data bus same page aa ab ac ad qa qb qc qd t acc t pac c t pac c t pac c
42 am29lv320mh/l 26517b4 january 31, 2007 data sheet ac characteristics hardware reset (reset#) note: 1. not 100% tested 2. ac specifications listed are tested with v io = v cc . contact amd for information on ac operation with v io v cc. . parameter description all speed options unit jedec std. t ready reset# pin low (during embedded algorithms) to read mode (see note) max 20 s t ready reset# pin low (not during embedded algorithms) to read mode (see note) max 500 ns t rp reset# pulse width min 500 ns t rh reset high time before read (see note) min 50 ns t rpd reset# low to standby mode min 20 s reset# ry/by# ry/by# t rp t ready reset timings not during embedded algorithms t ready ce#, oe# t rh ce#, oe# reset timings during embedded algorithms reset# t rp t rb figure 16. reset timings
january 31, 2007 26517b4 am29lv320mh/l 43 data sheet ac characteristics erase and program operations notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. 3. for 1?16 words/1?32 bytes programmed. 4. effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. word/byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. ac specifications listed are tested with v io = v cc . contact amd for information on ac operation with v io v cc. 7. when using the program suspend/resume feature, if the suspend command is issued within t poll , t poll must be fully re-applied upon resuming the programming operation. if the suspend command is issued after t poll , t poll is not required again prior to reading the status bits upon resuming. parameter speed options jedec std. description 90r 101, 101r 112, 112r 120, 120r unit t avav t wc write cycle time (note 1) min 90 100 110 120 ns t avwl t as address setup time min 0 ns t aso address setup time to oe# low during toggle bit polling min 15 ns t wlax t ah address hold time min 45 ns t aht address hold time from ce# or oe# high during toggle bit polling min 0 ns t dvwh t ds data setup time min 45 ns t whdx t dh data hold time min 0 ns t oeph output enable high during toggle bit polling min 20 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 35 ns t whdl t wph write pulse width high min 30 ns t whwh1 t whwh1 write buffer program operat ion (notes 2, 3) typ 240 s effective write buffer program operation (notes 2, 4) per byte typ 7.5 s per word typ 15 s accelerated effective write buffer program operation (notes 2, 5) per byte typ 6.25 s per word typ 12.5 s single word/byte program operation (notes 2, 5) byte ty p 60 s word 60 accelerated single word/byte programming operation (note 2) byte ty p 54 s word 54 t whwh2 t whwh2 sector erase operation (note 2) typ 0.5 sec t vhh v hh rise and fall time (note 1) min 250 ns t vcs v cc setup time (note 1) min 50 s t busy we# to ry/by# max 90 100 110 120 ns t poll program valid before status polling (note 7) max 4 s
44 am29lv320mh/l 26517b4 january 31, 2007 data sheet ac characteristics oe# we# ce# v cc data addresses t ds t ah t dh t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t cs status d out program command sequence (last two cycles) ry/by# t rb t busy t ch pa t poll n otes: 1 . pa = program address, pd = program data, d out is the true data at the program address. 2 . illustration shows device in word mode. figure 17. program operation timings acc t vhh v hh v il or v ih v il or v ih t vhh figure 18. accelerated program timing diagram
january 31, 2007 26517b4 am29lv320mh/l 45 data sheet ac characteristics oe# ce# addresses v cc we# data 2aah sa t ah t wp t wc t as t wph 555h for chip erase 10 for chip erase 30h t ds t vcs t cs t dh 55h t ch in progress complete t whwh2 va va erase command sequence (last two cycles) read status data ry/by# t rb t busy notes: 1. sa = sector address (for sector erase), va = valid address for reading status data (see ?write operation status? . 2. illustration shows device in word mode. figure 19. chip/sector erase operation timings
46 am29lv320mh/l 26517b4 january 31, 2007 data sheet ac characteristics we# ce# oe# high z t oe high z dq15 and dq7 dq14?dq8, dq6?dq0 ry/by# t busy complement tr u e addresses va t oeh t ce t ch t oh t df va va status data complement status data tr u e valid data valid data t acc t rc t poll note: va = valid address. illustration shows first status cycle af ter command sequence, last stat us read cycle, and array data read cycle. figure 20. data# polling timings (during embedded algorithms)
january 31, 2007 26517b4 am29lv320mh/l 47 data sheet ac characteristics oe# ce# we# addresses t oeh t dh t aht t aso t oeph t oe valid data (first read) (second read) (stops toggling) t ceph t aht t as dq6/dq2 valid data valid status valid status valid status ry/by# note: va = valid address; not requir ed for dq6. illust ration shows first two status cycle af ter command sequence, last status read cycle, and array data read cycle figure 21. toggle bit timings (during embedded algorithms) note: dq2 toggles only when read at an address within an erase- suspended sector. the system may use oe# or ce# to toggle dq2 and dq6. figure 22. dq2 vs. dq6 enter erase erase erase enter erase suspend program erase suspend read erase suspend read erase we# dq6 dq2 erase complete erase suspend suspend program resume embedded erasing
48 am29lv320mh/l 26517b4 january 31, 2007 data sheet ac characteristics temporary sector unprotect note: 1. not 100% tested. 2. ac specifications listed are tested with v io = v cc . contact amd for information on ac operation with v io v cc. parameter all speed options jedec std description unit t vidr v id rise and fall time (see note) min 500 ns t rsp reset# setup time fo r temporary sector unprotect min 4 s reset# t vidr v id v ss , v il , or v ih v id v ss , v il , or v ih ce# we# ry/by# t vidr t rsp program or erase command sequence t rrb figure 23. temporary sector group unprotect timing diagram
january 31, 2007 26517b4 am29lv320mh/l 49 data sheet ac characteristics sector group protect: 150 s, sector group unprot ect: 15 ms 1 s reset# sa, a6, a3, a2, a1, a0 data ce# we# oe# 60h 60h 40h valid* valid* valid* status sector group protect or unprotect verify v id v ih * for sector group protect, a6:a0 = 0xx0010. for sector group unprotect, a6:a0 = 1xx0010. figure 24. sector group protect and unprotect timing diagram
50 am29lv320mh/l 26517b4 january 31, 2007 data sheet ac characteristics alternate ce# cont rolled erase and program operations notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. 3. for 1?16 words/1?32 bytes programmed. 4. effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. word/byte programming specification is based upon a single wo rd/byte programming operation not utilizing the write buffer. 6. ac specifications listed are tested with v io = v cc . contact amd for information on ac operation with v io v cc. 7. when using the program suspend/resume feature, if the suspend command is issued within t poll , t poll must be fully re-applied upon resuming the programming operation. if the suspend command is issued after t poll , t poll is not required again prior to reading the status bits upon resuming. parameter speed options jedec std. description 90r 101, 101r 112, 112r 120, 120r unit t avav t wc write cycle time (note 1) min 90 100 110 120 ns t avwl t as address setup time min 0 ns t elax t ah address hold time min 45 ns t dveh t ds data setup time min 45 ns t ehdx t dh data hold time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 45 ns t ehel t cph ce# pulse width high min 30 ns t whwh1 t whwh1 write buffer program operation (notes 2, 3) typ 240 s effective write buffer program operation (notes 2, 4) per byte typ 7.5 s per word typ 15 s accelerated effective write buffer program operation (notes 2, 4) per byte typ 6.25 s per word typ 12.5 s single word/byte program operation (note 2, 5) byte ty p 60 s word 60 accelerated single word/byte programming operation (note 2) byte ty p 54 s word 54 t whwh2 t whwh2 sector erase operation (note 2, 5) typ 0.5 sec t rh reset high time before write (note 1) min 50 ns t poll program valid before status polling (note 7) max 4 s
january 31, 2007 26517b4 am29lv320mh/l 51 data sheet ac characteristics t ghel t ws oe# ce# we# reset# t ds data t ah addresses t dh t cp dq7#, d out t wc t as t cph pa data# polling a0 for program 55 for erase t rh t whwh1 or 2 ry/by# t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase t busy dq15# t poll notes: 1. figure indicates last two bus cycles of a program or erase operation. 2. pa = program address, sa = sector address, pd = program data. 3. dq7# is the complement of the data written to the device. d out is the data written to the device. 4. illustration shows device in word mode. figure 25. alternate ce# controlled write (erase/program) operation timings
52 am29lv320mh/l 26517b4 january 31, 2007 data sheet erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25 c, 3.0 v v cc , programming specification assume that all bits are programmed to 00h. 2. maximum values are measured at v cc = 3.0, worst case temperature. maximum values are valid up to and including 100,000 program/erase cycles. 3. word/byte programming specification is based upon a single wo rd/byte programming operation not utilizing the write buffer. 4. for 1-16 words or 1-32 bytes programmed in a single write buffer programming operation. 5. effective write buffer specification is calculated on a per-wor d/per-byte basis for a 16-word/32-byte write buffer operation. 6. in the pre-programming step of the embedded erase al gorithm, all bits are programmed to 00h before erasure. 7. system-level overhead is the time required to execute the co mmand sequence (s) for the program command. see tables 12 and 13 for further information on command definitions. 8. the device has a minimum erase and pr ogram cycle endurance of 100,000 cycles. latchup characteristics note: includes all pins except v cc . test conditions: v cc = 3.0 v, one pin at a time. parameter typ (note 1) max (note 2) unit comments sector erase time 0.5 3.5 sec excludes 00h programming prior to erasure (note 6) chip erase time 32 64 sec single word/byte program time (note 3) 60 600 s excludes system level overhead (note 7) accelerated single word/byte program time (note 3) 54 540 s total write buffer program time (note 4) 240 1200 s effective write buffer program time (note 5) per byte 7.5 38 s per word 15 75 s total accelerated write buffer program time (note 4) 200 1040 s effective accelerated write buffer program time (note 5) per byte 6.25 33 s per word 12.5 65 s chip program time 31.5 73 sec description min max input voltage with respect to v ss on all pins except i/o pins (including a9, oe#, and reset#) ?1.0 v 12.5 v input voltage with respect to v ss on all i/o pins ?1.0 v v cc + 1.0 v v cc current ?100 ma +100 ma
january 31, 2007 26517b4 am29lv320mh/l 53 data sheet tsop pin and bga package capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. data retention parameter symbol parameter desc ription test setup typ max unit c in input capacitance v in = 0 tsop 6 7.5 pf bga 4.2 5 pf c out output capacitance v out = 0 tsop 8.5 12 pf bga 5.4 6.5 pf c in2 control pin capacitance v in = 0 tsop 7.5 9 pf bga 3.9 4.7 pf parameter description t est conditions min unit minimum pattern data retention time 150 c10years 125 c20years
54 am29lv320mh/l 26517b4 january 31, 2007 data sheet physical dimensions ts056/tsr056?56-pin standard and reverse pinout thin sm all outline package (tsop) notes: 1 controlling dimensions are in millimeters (mm). (dimensioning and tolerancing conforms to ansi y14.5m-1982.) 2 pin 1 identifier for standard pin out (die up). 3 pin 1 identifier for reverse pin out (die down), ink or laser mark. 4 to be determined at the seating plane -c- . the seating plane is defined as the plane of contact that is made when the package leads are allowed to rest freely on a flat horizontal surface. 5 dimensions d1 and e do not include mold protrusion. allowable mold protusion is 0.15 mm per side. 6 dimension b does not include dambar protusion. allowable dambar protusion shall be 0.08 mm total in excess of b dimension at max material condition. minimum space between protrusion and an adjacent lead to be 0.07 mm. 7 these dimesions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip. 8. lead coplanarity shall be within 0.10 mm as measured from the seating plane. 9 dimension "e" is measured at the centerline of the leads. 3160\38.10a mo-142 (b) ec ts/tsr 56 nom. --- --- 1.00 1.20 0.15 1.05 max. --- min. 0.95 0.20 0.23 0.17 0.22 0.27 0.17 --- 0.16 0.10 --- 0.21 0.10 20.00 20.20 19.90 14.00 14.10 13.90 0.60 0.70 0.50 3? 5? 0? --- 0.20 0.08 56 18.40 18.50 18.30 0.05 0.50 basic e r b1 jedec package symbol a a2 a1 d1 d c1 c b e l n o
january 31, 2007 26517b4 am29lv320mh/l 55 data sheet physical dimensions laa064?64-ball fortified ball grid array ( f bga) 13 x 11 mm package
56 am29lv320mh/l 26517b4 january 31, 2007 data sheet revision summary revision a (may 30, 2002) initial release as advance information data sheet. revision a+1 (september 3, 2002) mirrorbit 32 mbit device family changed the 48-pin tsop to 40-pin tsop. alternate ce# controlled erase and program operations added t rh parameter to table. erase and program operations added t busy parameter to table. figure 16. program operation timings added ry/by# to waveform. tsop and bga pin capacitance added the fbga package. program suspend/program resume command sequence changed 15 s typical to maximum and added 5 s typical. erase suspend/erase resume commands changed typical from 20 s to 5 s and added a maxi- mum of 20 s. product selector guide added note 2. ordering information added 101r, 112r, and 120r to valid combinations table. added note 1. read-only operations, erase and program operations, alternate ce# controlled erase and program operations, added 101r, 112r, and 120r to speed options. revision a+2 (nov ember 15, 2002) customer lockable: secured silicon sector not programmed or protected at the factory added second bullet and figure. product selector guide and read-only operations added 30 ns to the 112r and 120r to max page ac- cess time and max oe# access time. changed the chip enable to output high z and out- put enable to output high z to 16 ns. byte/word program command sequence, sector erase command sequence, and chip erase command sequence noted that the secured silic on sector, autoselect, and cfi functions are unavailable when a program or erase operation is in progress. common flash memory interface (cfi) changed cfi website address. dc characteristics added i lr parameter symbol to table. removed v il , v ih , v ol , and v oh and replaced with vil, v ih , v ol , v oh1 and v oh2. clarified note #5. removed note #6. read-only operations added note #3. absolute maximum rating changed the ambient temperature with power ap- plied from ?55 c to +125 c to ?65 c to +125 c. revision a+3 (febr uary 14, 2003) distinctive characteristics corrected performance characteristics. ac characteristics added note. input values in the t whwh 1 and t whwh 2 parameters in the erase and program options table that were previ- ously tbd. also added notes 5 and 6. input values in the t whwh 1 and t whwh 2 parameters in the alternate ce# controlled erase and program op- tions table that were previously tbd. also added notes 5 and 6. erase and programming performance input values into table that were previously tbd. added note 3 and 4. revision b (may 7, 2003) distinctive characteristics added typical active read current. global converted to full datasheet version. modified secured silicon sector flash memory region section to in- clude esn references. dc characteristics corrected typical and maximum values for the i cc1 , i cc2 , and i cc3 . erase and program operations and alternate ce# controlled erase and program operations changed accelerated effective write buffer program operation value.
january 31, 2007 26517b4 am29lv320mh/l 57 data sheet erase and programming performance input values into table that were previously tbd. modi- fied notes. removed word references. revision b +1 (february 12, 2004) customer lockable: secured silicon sector not programmed or protected at the factory removed second paragraph. table 10 & table 11: command definitions replaced the addr information for both program/erase suspend and program/erase resume from ba to xxx. erase suspend/erase resume commands added note on flash device performance during suspend/erase mode . ac characteristics, erase and program operations removed byte information for t whwh1 parameter. added t poll information and footnote. ac characteristics program operation timing s, data# polling timings (during embedded algorithms, and alternate ce# controlled write (erase/program) operation timings figures: updated with t poll information. ac characteristics - alternate ce# controlled erase and program operations added t poll information and footnote. erase and programming performance added t poll information and footnote. trademarks updated. cover sheet and title page added notation referencing superseding documenta- tion. revision b+2 (october 27, 2004) ordering information added lead-free package options. revision b+3 (december 14, 2005) global this product has been retired and is not available for designs. for new and current designs, s29gl032a supersedes am29lv320mh/l and is the factory-rec- ommended migration path. please refer to the s29gl032a datasheet for specifications and ordering information. availability of th is document is retained for reference and historical purposes only. revision b4 (january 31, 2007) global changed secsi sector to secured silicon sector. ac characteristics erase and program operations table: changed t busy to a maximum specification. deleted ?t vcs ? from t busy parameter name. colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limita- tion, ordinary industrial use, general o ffice use, personal use, and household use, but are not designed, developed and manufac tured as con- templated (1) for any use that includes fatal risks or dangers th at, unless extremely high safety is secured, could have a seri ous effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intolera ble (i.e., submersible repeater and artificial satellite). please note that spansion llc will not be liable to you and/or any third party for any claims or damages arisi ng in connection with above-mentioned uses of the products. any se miconductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and pr evention of over-current levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restrictions on expor t under the foreign exchange and foreign trade law of japan, the us export administra tion regulations or the applicable laws of any other country, the prior au- thorization by the respective government entit y will be required for export of those products. trademarks copyright ? 2001?2005 advanced micro devices, inc. all rights reserv ed. amd, the amd logo, and combinations thereof are registe red trade- marks of advanced micro devices, inc. expressflash is a trademar k of advanced micro devices, inc. product names used in this pu blication are for identification purposes only and may be tr ademarks of their respective companies. copyright ? 2006?2007 spansion inc. all rights reserved. spansion, the spansion logo, mirrorbit, o rnand, hd-sim, and combinatio ns thereof are trademarks of spansion inc. other names are for informational purposes only and may be trademarks of their respecti ve owners.

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